STN3PF06:P-Channel 60V - 0.18 Ohm - 3A SOT-223 STripFET(TM) II POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Key Features

  • Extremely dv/dt capability
  • Application oriented characterization
  • 100% avalanche tested
产品规格
DescriptionVersionSize
DS2143: P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET™ II Power MOSFET4.2248 KB
应用手册
DescriptionVersionSize
AN1703: Guidelines for using ST's MOSFET smd Packages1.3776 KB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STN3PF06 PSpice model (.lib)1.0559 bytes
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STN3PF06SOT-223Tape And Reel--NECEAR99-
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STN3PF06SOT-223IndustrialEcopack2md_ll-wspc-sot-wspc-223_csll-wspc-ad6ab3f_sdm_signed.pdf
md_ll-wspc-sot-wspc-223_csll-wspc-ad6ab3f_sdm.xml
P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET™ II Power MOSFET STN3PF06
Guidelines for using ST's MOSFET smd Packages STD26P3LLH6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STN3PF06
Very low drop voltage regulators with inhibit KFXX
md_ll-wspc-sot-wspc-223_csll-wspc-ad6ab3f_sdm_signed.pdf STN3PF06
md_ll-wspc-sot-wspc-223_csll-wspc-ad6ab3f_sdm.xml STN3PF06