STP160N4LF6：N-channel 40 V, 0.0021 Ohm typ., 120 A STripFET F6 Power MOSFET in TO-220 package
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Key Features
- RDS(on)
* Qg
industry benchmark
- Extremely low on-resistance RDS(on)
- Logic level drive
- High avalanche ruggedness
- 100% avalanche tested
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STP160N4LF6 | TO-220AB | Tube | - | - | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STP160N4LF6 | TO-220AB | Industrial | Ecopack2 | |
