STR1P2UH7：P-channel 20 V, 0.087 Ohm typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package

This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.

Key Features

  • Very low on-resistance
  • Very low capacitance and gate charge
  • High avalanche ruggedness
产品规格
DescriptionVersionSize
DS9837: P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET™ H7 Power MOSFET in a SOT-23 package3.0607 KB
应用手册
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STR1P2UH7 PSpice model1.03 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STR1P2UH7SOT-23Tape And Reel0.21000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STR1P2UH7SOT-23IndustrialEcopack2md_vx-wspc-sot-wspc-23_csvxnp21bnf-wspc-(str1p2uh7)-wspc-wcp-wspc-ver2_signed.pdf
md_vx-wspc-sot-wspc-23_csvxnp21bnf-wspc-(str1p2uh7)-wspc-wcp-wspc-ver2.xml
P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET™ H7 Power MOSFET in a SOT-23 package STR1P2UH7
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STR1P2UH7
Very low drop voltage regulators with inhibit KFXX
md_vx-wspc-sot-wspc-23_csvxnp21bnf-wspc-(str1p2uh7)-wspc-wcp-wspc-ver2_signed.pdf STR1P2UH7
md_vx-wspc-sot-wspc-23_csvxnp21bnf-wspc-(str1p2uh7)-wspc-wcp-wspc-ver2.xml STR1P2UH7
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