STR2P3LLH6:P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
产品规格
DescriptionVersionSize
DS9647: P-channel -30 V, 0.048 Ω typ., -2 A STripFET™ H6 Power MOSFET in a SOT-23 package3.0541 KB
应用手册
DescriptionVersionSize
AN4391: New P-channel trench technology from ST for low power DC-DC conversions and load switching applications1.01 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STR2P3LLH6SOT-23Tape And Reel0.361000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STR2P3LLH6SOT-23IndustrialEcopack2md_vx-wspc-sot-wspc-23_csvx6b31b6f-wspc-(str2p3llh6)-wspc-wcp-wspc-ver2_signed.pdf
md_vx-wspc-sot-wspc-23_csvx6b31b6f-wspc-(str2p3llh6)-wspc-wcp-wspc-ver2.xml
P-channel -30 V, 0.048 Ω typ., -2 A STripFET™ H6 Power MOSFET in a SOT-23 package STR2P3LLH6
New P-channel trench technology from ST for low power DC-DC conversions and load switching applications STL6P3LLH6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
md_vx-wspc-sot-wspc-23_csvx6b31b6f-wspc-(str2p3llh6)-wspc-wcp-wspc-ver2_signed.pdf STR2P3LLH6
md_vx-wspc-sot-wspc-23_csvx6b31b6f-wspc-(str2p3llh6)-wspc-wcp-wspc-ver2.xml STR2P3LLH6