STS6NF20V:N-channel 20 V, 0.030 Ohm, 6 A, 2.7 V drive STripFET(TM) II Power MOSFET in SO-8 package
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Key Features
- Ultra low threshold gate drive (2.5 V)
- Standard outline for easy automated surface mount assembly
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
型号 | 制造商 | Description |
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ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
STS6NF20V | SO-8 | Tape And Reel | 0.328 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STS6NF20V | SO-8 | Industrial | Ecopack2 | |