STT7P2UH7：P-channel 20 V, 0.0195 Ohm typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package

This P-channel Power MOSFET utilizes the STripFET™ H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.

Key Features

  • Very low on-resistance
  • Very low capacitance and gate charge
  • High avalanche ruggedness
产品规格
DescriptionVersionSize
DS9893: P-channel 20 V, 0.0195 Ω typ., 7 A STripFET™ H7 Power MOSFET in a SOT23-6L package3.0483 KB
应用手册
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STT7P2UH7 PSpice model1.02 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STT7P2UH7SOT23-6LTape And Reel0.271000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STT7P2UH7SOT23-6LIndustrialEcopack2
P-channel 20 V, 0.0195 Ω typ., 7 A STripFET™ H7 Power MOSFET in a SOT23-6L package STT7P2UH7
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STT7P2UH7
Very low drop voltage regulators with inhibit KFXX
Products 产品服务
Manufacturers 生产厂家
联系购买Sales
©1993 - 2024 BDTIC