The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STX93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STX83003, its complementary NPN transistor.
Key Features
| Description | Version | Size |
|---|---|---|
| DS2932: High voltage fast-switching PNP power transistor | 2.3 | 249 KB |
| Description | Version | Size |
|---|---|---|
| AN3400: Analysis and simulation of a BJT complementary pair in a self-oscillating CFL solution | 1.0 | 4 MB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| STX93003 | TO-92 | Poly Bag | 0.061 | 1000 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| STX93003 | TO-92 | Industrial | Ecopack1 |
