TIP35CW:Complementary power transistors

The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Low collector-emitter saturation voltage
  • Complementary NPN - PNP transistors
产品规格
DescriptionVersionSize
DS4476: Complementary power transistors4.2190 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
TIP35CWTO-247Tube0.835500NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
TIP35CWTO-247IndustrialEcopack2
Complementary power transistors TIP36CW