2SC4409 Power transistor for high-speed switching applications _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Collector Current	I_C	2	A
Collector power dissipation (mounted on ceramic board (250mm**2, t0.8mm))	P_C	1	W
Collector-emitter voltage	V_CEO	50	V

项目	符号	条件	数值	单位
Transition frequency (Typ.)	f_T	I_C=0.1A V_CE=2V	100	MHz
DC Current Gain hFE (Max)	h_FE	I_C=0.1A V_CE=2V	400	-
DC Current Gain hFE (Min)	h_FE	I_C=0.1A V_CE=2V	120	-
Collector Emitter Saturation Voltage (Max)	V_CE(sat)	I_B=50mA I_C=1A	0.5	V

Catalog	Bipolar Power Transistors[Jun,2015]	(PDF: 1139KB)

TA79L09F