2SC5106 Radio-frequency bipolar transistor _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Collector Current	I_C	0.03	A
Collector power dissipation	P_C	150	mW
Junction temperature	T_j	125	degC
Collector-emitter voltage	V_CEO	10	V

项目	符号	条件	数值	单位
Insertion Gain (Typ.)	\|S21\|²	f=1GHz	11	dB
Transition frequency (Typ.)	f_T	-	6	GHz

Catalog	Radio-Frequency Semiconductors[Feb,2015]	(PDF: 1320KB)
Catalog	Radio-Frequency Semiconductors Diodes[Sep,2006]	(PDF: 2219KB)
Catalog	Radio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006]	(PDF: 2873KB)
Catalog	High-Frequency Semiconductors Power Devices[Mar,2004]	(PDF: 2496KB)

2SC6105