2SJ668 Power MOSFET (P-ch single) _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-5	A
Power Dissipation	P_D	20	W
Drain-Source voltage	V_DSS	-60	V
Drain-Source voltage	V_DSS	-60	V

项目	符号	条件	数值	单位
Total gate charge (Typ.)	Q_g	-	15	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	0.17	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4V	0.25	Ω

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