2SK2606 Power MOSFET (N-ch 700V《VDSS) _ BDTIC 中国领先电子元器件代理商

Toshiba Package Name	TO-3P(N)IS
Pins	3

Characteristics	Symbol	Rating	Unit
Drain current	I_D	8	A
Power Dissipation	P_D	85	W
Drain-Source voltage	V_DSS	800	V
Drain-Source voltage	V_DSS	800	V

项目	符号	条件	数值	单位
Total gate charge (Typ.)	Q_g	-	68	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	1.2	Ω

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