HN2E04F Multi-chip discrete device (PNP + SW diode)

数据手册DataSheet
产品概述
Other characteristics (Q1)High breakdown voltage PNP
Other characteristics (Q2)Small-signal SW diode
Internal ConnectionIndependent
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NameSM6
JEITASC-74
Package CodeSOT-26
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector Current (Q1)IC-0.1A
Q2 Average Forward CurrentIO100mA
Collector-emitter voltage (Q1)VCEO-120V
Q2 Reverse VoltageVR80V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
HN2E04F-GR(TE85L,FJapan3000yes
技术资料
Reliability InformationReliability Data[Mar,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
HN1C07F