HN4B102J Power transistor for high-speed switching applications

数据手册DataSheet
产品概述
Application ScopeMOS gate drivers
PolarityNPN + PNP
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NameSMV
JEITASC-74A
Package CodeSOT-25
Pins5
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC-8A
Collector CurrentIC8A
Collector CurrentIC2A
Collector CurrentIC-1.8A
Collector Current (Q1)IC2A
Collector Current (Q2)IC-1.8A
Collector CurrentICP-8A
Collector CurrentICP8A
Collector Current (Q1)ICP8A
Collector Current (Q2)ICP-8A
Collector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC1.1W
Collector power dissipation (Q1) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC1.1W
Collector power dissipation (Q1/Q2) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC1.1W
Collector-Base VoltageVCBO60V
Collector-Base VoltageVCBO-30V
Collector-Base Voltage (Q1)VCBO60V
Collector-Base Voltage (Q2)VCBO-30V
Collector-emitter voltage (Q1)VCEO30V
Collector-emitter voltage (Q2)VCEO-30V
Collector-emitter voltageVCEO-30V
Collector-emitter voltageVCEO30V
产品特性
项目符号条件数值单位
DC Current Gain hFE (Q1) (Max)hFE-500-
DC Current Gain hFE (Q1) (Min)hFE-200-
DC Current Gain hFE (Q2) (Max)hFE-500-
DC Current Gain hFE (Q2) (Min)hFE-200-
Collector Emitter Saturation Voltage (Q1) (Max)VCE(sat)-0.14V
Collector Emitter Saturation Voltage (Q2) (Max)VCE(sat)--0.2V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
HN4B102J(TE85L,F)Japan3000yes
技术资料
Reliability InformationReliability Data[Feb,2014](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)
TC4SU69F