HN4B102J Power transistor for high-speed switching applications _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Collector Current	I_C	-8	A
Collector Current	I_C	8	A
Collector Current	I_C	2	A
Collector Current	I_C	-1.8	A
Collector Current (Q1)	I_C	2	A
Collector Current (Q2)	I_C	-1.8	A
Collector Current	I_CP	-8	A
Collector Current	I_CP	8	A
Collector Current (Q1)	I_CP	8	A
Collector Current (Q2)	I_CP	-8	A
Collector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))	P_C	1.1	W
Collector power dissipation (Q1) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))	P_C	1.1	W
Collector power dissipation (Q1/Q2) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))	P_C	1.1	W
Collector-Base Voltage	V_CBO	60	V
Collector-Base Voltage	V_CBO	-30	V
Collector-Base Voltage (Q1)	V_CBO	60	V
Collector-Base Voltage (Q2)	V_CBO	-30	V
Collector-emitter voltage (Q1)	V_CEO	30	V
Collector-emitter voltage (Q2)	V_CEO	-30	V
Collector-emitter voltage	V_CEO	-30	V
Collector-emitter voltage	V_CEO	30	V

项目	符号	条件	数值	单位
DC Current Gain hFE (Q1) (Max)	h_FE	-	500	-
DC Current Gain hFE (Q1) (Min)	h_FE	-	200	-
DC Current Gain hFE (Q2) (Max)	h_FE	-	500	-
DC Current Gain hFE (Q2) (Min)	h_FE	-	200	-
Collector Emitter Saturation Voltage (Q1) (Max)	V_CE(sat)	-	0.14	V
Collector Emitter Saturation Voltage (Q2) (Max)	V_CE(sat)	-	-0.2	V

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
HN4B102J(TE85L,F)	Japan	3000		yes

Reliability Information	Reliability Data[Feb,2014]	(PDF: 161KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Catalog	Bipolar Power Transistors[Jun,2015]	(PDF: 1139KB)

TC4SU69F