MT3S111 Radio-frequency SiGe Heterojunction Bipolar Transistor

数据手册DataSheet
产品概述
Application ScopeVHF/UHF band low noise, low distortion amplifier
PolarityNPN
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NameS-Mini
JEITASC-59
JEDECTO-236MOD
Package CodeSOT-346
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.1A
Collector power dissipationPC160mW
Collector power dissipation (mounted on board)PC700mW
Junction temperatureTj150degC
Collector-emitter voltageVCEO6V
产品特性
项目符号条件数值单位
Insertion Gain (Typ.)|S21|2f=1GHz12dB
Transition frequency (Typ.)fT-11.5GHz
Noise Figure (Typ.)NFf=1GHz0.9dB
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
MT3S111(TE85L,F)Japan3000yes
技术资料
Reliability InformationReliability Data[Mar,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
2SC6105