SSM5G09TU Multi-chip discrete device (P-ch + SBD) _ BDTIC 中国领先电子元器件代理商

SSM5G09TU Multi-chip discrete device (P-ch + SBD)

数据手册DataSheet

日文版下载(PDF:353KB)Japanese
英文版下载(PDF:306KB)English

产品概述

Generation	U-MOSⅢ
Internal Connection	Independent
RoHS Compatible Product(s) (#)	Available
Assembly bases	日本

封装信息

Package Image
Toshiba Package Name	UFV
Pins	5
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain current (Q1)	I_D	-1.5	A
Q2 Average Forward Current	I_O	500	mA
Drain-Source voltage (Q1)	V_DSS	-12	V
Q2 Reverse Voltage	V_R	12	V

产品特性

项目	符号	条件	数值	单位
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-2.5V	0.2	Ω
forward voltage of Built-in SBD	V_F	I_F=500mA	0.43	V

订购型号

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
SSM5G09TU(TE85L,F)	Japan	3000		yes

技术资料

Reliability Information	Reliability Data[Feb,2014]	(PDF: 161KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)

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