SSM6E01TU Multi-chip discrete device (P-ch + N-ch)

数据手册DataSheet
产品概述
GenerationU-MOSⅡ
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NameUF6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain current (Q1)ID-1A
Drain current (Q2)ID0.1A
Drain-Source voltage (Q1)VDSS-12V
Drain-Source voltage (Q2)VDSS20V
产品特性
项目符号条件数值单位
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=-2.5V0.24Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=2.5V10Ω
Gate threshold voltage (Q1) (Max)Vth--1.1V
Gate threshold voltage (Q1) (Min)Vth--0.4V
Gate threshold voltage (Q2) (Max)Vth-1.3V
Gate threshold voltage (Q2) (Min)Vth-0.7V
技术资料
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
SSM6P54TU