数据手册DataSheet产品概述| Polarity | N-ch |
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| Generation | U-MOSⅦ-H |
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| AEC-Q101 | Conform(*)
*: For detail information, please contact to our sales. |
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| RoHS Compatible Product(s) (#) | Available |
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| Assembly bases | 泰国 |
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封装信息| Package Image |  |
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| Toshiba Package Name | UDFN6B |
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| Pins | 6 |
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| Mounting | Surface Mount |
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| Absolute Maximum Ratings| Characteristics | Symbol | Rating | Unit |
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| Drain current | ID | 9 | A | | Drain-Source voltage | VDSS | 30 | V | | Gate-Source voltage | VGSS | +/-20 | V |
产品特性| 项目 | 符号 | 条件 | 数值 | 单位 |
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| Input capacitance (Typ.) | Ciss | - | 620 | pF | | Total gate charge (Typ.) | Qg | - | 4.8 | nC | | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 0.026 | Ω | | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 0.0195 | Ω | | Drain-Source on-resistance (Typ.) | RDS(ON) | |VGS|=4.5V | 0.019 | Ω | | Drain-Source on-resistance (Typ.) | RDS(ON) | |VGS|=10V | 0.014 | Ω | | Gate threshold voltage (Max) | Vth | - | 2.5 | V | | Gate threshold voltage (Min) | Vth | - | 1.3 | V |
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