SSM6L11TU Small-signal MOSFET 2 in 1 _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Drain current	I_D	0.5	A
Drain current	I_D	-0.5	A
Drain current (Q1)	I_D	0.5	A
Drain current (Q2)	I_D	-0.5	A
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage (Q1)	V_DSS	20	V
Drain-Source voltage (Q2)	V_DSS	-20	V
Gate-Source voltage	V_GSS	±12	V
Gate-Source voltage	V_GSS	+/-12	V
Gate-Source voltage (Q1)	V_GSS	+/-12	V
Gate-Source voltage (Q2)	V_GSS	±12	V

项目	符号	条件	数值	单位
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=1.8V	0.395	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=2.5V	0.190	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=4V	0.145	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=1.8V	0.200	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=2.5V	0.150	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=4V	0.125	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-4V	0.260	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-2.5V	0.430	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=-4V	0.210	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=-2.5V	0.310	Ω
Gate threshold voltage (Q1) (Max)	V_th	-	1.1	V
Gate threshold voltage (Q1) (Min)	V_th	-	0.5	V
Gate threshold voltage (Q2) (Max)	V_th	-	-1.1	V
Gate threshold voltage (Q2) (Min)	V_th	-	-0.5	V

Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)

SSM6P54TU