SSM6L13TU Small-signal MOSFET 2 in 1 _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Drain current	I_D	0.8	A
Drain current	I_D	-0.8	A
Drain current (Q1)	I_D	0.8	A
Drain current (Q2)	I_D	-0.8	A
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage (Q1)	V_DSS	20	V
Drain-Source voltage (Q2)	V_DSS	-20	V
Gate-Source voltage	V_GSS	+/-8	V
Gate-Source voltage	V_GSS	+/-12	V
Gate-Source voltage (Q1)	V_GSS	+/-12	V
Gate-Source voltage (Q2)	V_GSS	+/-8	V

项目	符号	条件	数值	单位
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=1.8V	0.235	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=2.5V	0.178	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=4V	0.143	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=1.8V	0.16	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=2.5V	0.134	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=4V	0.116	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-4V	0.234	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-2.5V	0.306	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-1.8V	0.46	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=-4V	0.175	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=-2.5V	0.23	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=-1.8V	0.3	Ω
Gate threshold voltage (Q1) (Max)	V_th	-	1.0	V
Gate threshold voltage (Q1) (Min)	V_th	-	0.4	V
Gate threshold voltage (Q2) (Max)	V_th	-	-1.0	V
Gate threshold voltage (Q2) (Min)	V_th	-	-0.3	V

Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)

SSM6P54TU