SSM6N15AFU Small-signal MOSFET 2 in 1

数据手册DataSheet
产品概述
PolarityN-ch×2
GenerationU-MOSⅢ
Internal ConnectionIndependent
Component Product (Q1)SSM3K15AFU
Component Product (Q2)SSM3K15AFU
RoHS Compatible Product(s) (#)Available
Assembly bases日本 / 马来西亚 / 泰国
封装信息
Package Image
Toshiba Package NameUS6
JEITASC-88
Package CodeSOT-363
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.1A
Drain currentID0.1A
Drain current (Q1)ID0.1A
Drain current (Q2)ID0.1A
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS30V
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS30V
Gate-Source voltageVGSS±20V
Gate-Source voltageVGSS±20V
Gate-Source voltage (Q1)VGSS±20V
Gate-Source voltage (Q2)VGSS±20V
产品特性
项目符号条件数值单位
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=2.5V6.0Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4V3.6Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=2.5V3.5Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4V2.3Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=2.5V6.0Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4V3.6Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=2.5V3.5Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4V2.3Ω
Gate-Source on-resistance (Typ.)RGS-1Mohm
Gate threshold voltage (Q1) (Max)Vth-1.5V
Gate threshold voltage (Q1) (Min)Vth-0.8V
Gate threshold voltage (Q2) (Max)Vth-1.5V
Gate threshold voltage (Q2) (Min)Vth-0.8V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
SSM6N15AFU,LF(TThailand3000yes
技术资料
PSpicePSpice Model[May,2015](lib: 3KB)
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
HN3C56FU