SSM6N24TU Small-signal MOSFET 2 in 1

数据手册DataSheet
产品概述
PolarityN-ch×2
GenerationU-MOSⅢ
Internal ConnectionIndependent
Component Product (Q1)SSM6K24FE
Component Product (Q2)SSM6K24FE
AEC-Q101Conform(*) *: For detail information, please contact to our sales.
RoHS Compatible Product(s) (#)Available
Assembly bases日本 / 泰国
封装信息
Package Image
Toshiba Package NameUF6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.5A
Drain currentID0.5A
Drain current (Q1)ID0.5A
Drain current (Q2)ID0.5A
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS30V
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS30V
Gate-Source voltageVGSS+/-12V
Gate-Source voltageVGSS±12V
Gate-Source voltage (Q1)VGSS±12V
Gate-Source voltage (Q2)VGSS+/-12V
产品特性
项目符号条件数值单位
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=2.5V0.180Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.145Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=2.5V0.140Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4.5V0.120Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=2.5V0.180Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4.5V0.145Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=2.5V0.140Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4.5V0.120Ω
Gate threshold voltage (Q1) (Max)Vth-1.1V
Gate threshold voltage (Q1) (Min)Vth-0.5V
Gate threshold voltage (Q2) (Max)Vth-1.1V
Gate threshold voltage (Q2) (Min)Vth-0.5V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHSAEC-Q100/AEC-Q101
Orderable part numberAssembly bases
SSM6N24TU,LF(TThailand3000yes-
SSM6N24TU,LXGF(TThailand3000-yesyes
技术资料
PSpicePSpice Model[Jan,2016](lib: 3KB)
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
SSM6P54TU