SSM6N37CTD Small-signal MOSFET 2 in 1 _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Drain current	I_D	0.25	A
Drain current	I_D	0.25	A
Drain current (Q1)	I_D	0.25	A
Drain current (Q2)	I_D	0.25	A
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage (Q1)	V_DSS	20	V
Drain-Source voltage (Q2)	V_DSS	20	V
Gate-Source voltage	V_GSS	±10	V
Gate-Source voltage	V_GSS	±10	V
Gate-Source voltage (Q1)	V_GSS	±10	V
Gate-Source voltage (Q2)	V_GSS	±10	V

项目	符号	条件	数值	单位
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=1.5V	5.60	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=1.8V	4.05	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=2.5V	3.02	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=4.5V	2.20	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=1.5V	3.07	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=1.8V	2.66	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=2.5V	2.16	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=4.5V	1.65	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=1.5V	5.60	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=1.8V	4.05	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=2.5V	3.02	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=4.5V	2.20	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=1.5V	3.07	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=1.8V	2.66	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=2.5V	2.16	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=4.5V	1.65	Ω
Gate threshold voltage (Q1) (Max)	V_th	-	1	V
Gate threshold voltage (Q1) (Min)	V_th	-	0.35	V
Gate threshold voltage (Q2) (Max)	V_th	-	1	V
Gate threshold voltage (Q2) (Min)	V_th	-	0.35	V

Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)