SSM6N42FE Small-signal MOSFET 2 in 1 _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Drain current	I_D	0.8	A
Drain current	I_D	0.8	A
Drain current (Q1)	I_D	0.8	A
Drain current (Q2)	I_D	0.8	A
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage (Q1)	V_DSS	20	V
Drain-Source voltage (Q2)	V_DSS	20	V
Gate-Source voltage	V_GSS	±10	V
Gate-Source voltage	V_GSS	±10	V
Gate-Source voltage (Q1)	V_GSS	±10	V
Gate-Source voltage (Q2)	V_GSS	±10	V

项目	符号	条件	数值	单位
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=1.5V	0.6	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=1.8V	0.45	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=2.5V	0.33	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=4.5V	0.24	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=1.5V	0.37	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=1.8V	0.31	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=2.5V	0.245	Ω
Drain-Source on-resistance (Q1) (Typ.)	R_DS(ON)	V_GS=4.5V	0.185	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=1.5V	0.6	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=1.8V	0.45	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=2.5V	0.33	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=4.5V	0.24	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=1.5V	0.37	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=1.8V	0.31	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=2.5V	0.245	Ω
Drain-Source on-resistance (Q2) (Typ.)	R_DS(ON)	V_GS=4.5V	0.185	Ω
Gate threshold voltage (Q1) (Max)	V_th	-	1	V
Gate threshold voltage (Q1) (Min)	V_th	-	0.35	V
Gate threshold voltage (Q2) (Max)	V_th	-	1	V
Gate threshold voltage (Q2) (Min)	V_th	-	0.35	V

PSpice	PSpice Model[Dec,2013]	(lib: 3KB)
Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)

HN1C01FE