SSM6N44FE Small-signal MOSFET 2 in 1

数据手册DataSheet
产品概述
FeatureHigh ESD protected
PolarityN-ch×2
Internal ConnectionIndependent
Component Product (Q1)SSM3K15FS
Component Product (Q2)SSM3K15FS
AEC-Q101Conform(*) *: For detail information, please contact to our sales.
RoHS Compatible Product(s) (#)Available
Assembly bases日本 / 马来西亚 / 泰国
封装信息
Package Image
Toshiba Package NameES6
JEITASC-107C
Package CodeSOT-563
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.1A
Drain currentID0.1A
Drain current (Q1)ID0.1A
Drain current (Q2)ID0.1A
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS30V
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS30V
Gate-Source voltageVGSS+/-20V
Gate-Source voltageVGSS+/-20V
Gate-Source voltage (Q1)VGSS+/-20V
Gate-Source voltage (Q2)VGSS+/-20V
产品特性
项目符号条件数值单位
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=2.5V7.0Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4V4.0Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=2.5V4.0Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4V2.2Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=2.5V7.0Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4V4.0Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=2.5V4.0Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4V2.2Ω
Gate threshold voltage (Q1) (Max)Vth-1.5V
Gate threshold voltage (Q1) (Min)Vth-0.8V
Gate threshold voltage (Q2) (Max)Vth-1.5V
Gate threshold voltage (Q2) (Min)Vth-0.8V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
SSM6N44FE,LM(TThailand4000yes
技术资料
PSpicePSpice Model[Aug,2015](lib: 3KB)
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
HN1C01FE