SSM6N7002BFU Small-signal MOSFET 2 in 1

数据手册DataSheet
产品概述
PolarityN-ch×2
GenerationU-MOSⅣ
Internal ConnectionIndependent
Component Product (Q1)SSM3K7002BFU
Component Product (Q2)SSM3K7002BFU
RoHS Compatible Product(s) (#)Available
Assembly bases日本 / 马来西亚 / 泰国
封装信息
Package Image
Toshiba Package NameUS6
JEITASC-88
Package CodeSOT-363
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.2A
Drain currentID0.2A
Drain current (Q1)ID0.2A
Drain current (Q2)ID0.2A
Drain-Source voltageVDSS60V
Drain-Source voltageVDSS60V
Drain-Source voltage (Q1)VDSS60V
Drain-Source voltage (Q2)VDSS60V
Gate-Source voltageVGSS+/-20V
Gate-Source voltageVGSS+/-20V
Gate-Source voltage (Q1)VGSS+/-20V
Gate-Source voltage (Q2)VGSS+/-20V
产品特性
项目符号条件数值单位
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V3.3Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V2.1Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4.5V2.1Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=10V1.62Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4.5V3.3Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=10V2.1Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4.5V2.1Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=10V1.62Ω
Gate threshold voltage (Q1) (Max)Vth-3.1V
Gate threshold voltage (Q1) (Min)Vth-1.5V
Gate threshold voltage (Q2) (Max)Vth-3.1V
Gate threshold voltage (Q2) (Min)Vth-1.5V
技术资料
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
HN3C56FU