SSM6N7002CFU Small-signal MOSFET 2 in 1

数据手册DataSheet
产品概述
PolarityN-ch×2
GenerationU-MOSⅦ-H
Internal ConnectionIndependent
Component Product (Q1)SSM3K7002CFU
Component Product (Q2)SSM3K7002CFU
RoHS Compatible Product(s) (#)Available
Assembly bases泰国
封装信息
Package Image
Toshiba Package NameUS6
JEITASC-88
Package CodeSOT-363
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.17A
Drain currentID0.17A
Drain current (Q1)ID0.17A
Drain current (Q2)ID0.17A
Drain-Source voltageVDSS60V
Drain-Source voltageVDSS60V
Drain-Source voltage (Q1)VDSS60V
Drain-Source voltage (Q2)VDSS60V
Gate-Source voltageVGSS+20/-20V
Gate-Source voltageVGSS+20/-20V
Gate-Source voltage (Q1)VGSS+20/-20V
Gate-Source voltage (Q2)VGSS+20/-20V
产品特性
项目符号条件数值单位
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V4.7Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V3.9Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4.5V3.2Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=10V2.8Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4.5V4.7Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=10V3.9Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4.5V3.2Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=10V2.8Ω
Gate threshold voltage (Q1) (Max)Vth-2.1V
Gate threshold voltage (Q1) (Min)Vth-1.1V
Gate threshold voltage (Q2) (Max)Vth-2.1V
Gate threshold voltage (Q2) (Min)Vth-1.1V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
SSM6N7002CFU,LF(TThailand3000yes
技术资料
Reliability InformationReliability Data[May,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
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