SSM6N7002KFU Small-signal MOSFET 2 in 1

数据手册DataSheet
产品概述
FeatureHigh ESD protected
PolarityN-ch×2
GenerationU-MOSⅦ-H
Internal ConnectionIndependent
Component Product (Q1)SSM3K7002KFU
Component Product (Q2)SSM3K7002KFU
AEC-Q101Conform(*) *: For detail information, please contact to our sales.
RoHS Compatible Product(s) (#)Available
Assembly bases泰国
封装信息
Package Image
Toshiba Package NameUS6
JEITASC-88
Package CodeSOT-363
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.3A
Drain currentID0.3A
Drain current (Q1)ID0.3A
Drain current (Q2)ID0.3A
Drain-Source voltageVDSS60V
Drain-Source voltageVDSS60V
Drain-Source voltage (Q1)VDSS60V
Drain-Source voltage (Q2)VDSS60V
Gate-Source voltageVGSS+/-20V
Gate-Source voltageVGSS+/-20V
Gate-Source voltage (Q1)VGSS+/-20V
Gate-Source voltage (Q2)VGSS+/-20V
产品特性
项目符号条件数值单位
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V1.75Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V1.5Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4.5V1.2Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=10V1.05Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4.5V1.75Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=10V1.5Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4.5V1.2Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=10V1.05Ω
Gate threshold voltage (Q1) (Max)Vth-2.1V
Gate threshold voltage (Q1) (Min)Vth-1.1V
Gate threshold voltage (Q2) (Max)Vth-2.1V
Gate threshold voltage (Q2) (Min)Vth-1.1V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHSAEC-Q100/AEC-Q101
Orderable part numberAssembly bases
SSM6N7002KFU,LF(TThailand3000yes-
SSM6N7002KFU,LXG(TThailand3000-yesyes
技术资料
Reliability InformationReliability Data[May,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
HN3C56FU