SSM6P09FU Small-signal MOSFET 2 in 1

数据手册DataSheet
产品概述
PolarityP-ch×2
Internal ConnectionIndependent
Component Product (Q1)SSM3J09FU
Component Product (Q2)SSM3J09FU
AEC-Q101Conform(*) *: For detail information, please contact to our sales.
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NameUS6
JEITASC-88
Package CodeSOT-363
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-0.2A
Drain currentID-0.2A
Drain current (Q1)ID-0.2A
Drain current (Q2)ID-0.2A
Drain-Source voltageVDSS-30V
Drain-Source voltageVDSS-30V
Drain-Source voltage (Q1)VDSS-30V
Drain-Source voltage (Q2)VDSS-30V
Gate-Source voltageVGSS+/-20V
Gate-Source voltageVGSS+/-20V
Gate-Source voltage (Q1)VGSS+/-20V
Gate-Source voltage (Q2)VGSS+/-20V
产品特性
项目符号条件数值单位
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=-4V4.2Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=-4V3.3Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-4V4.2Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=-4V3.3Ω
Gate threshold voltage (Q1) (Max)Vth--1.8V
Gate threshold voltage (Q1) (Min)Vth--1.1V
Gate threshold voltage (Q2) (Max)Vth--1.8V
Gate threshold voltage (Q2) (Min)Vth--1.1V
技术资料
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
HN3C56FU