TK11A65W Power MOSFET (N-ch 500V《VDSS≤700V)

数据手册DataSheet
产品概述
Application ScopeSwitching regulators
PolarityN-ch
GenerationDTMOSⅣ
RoHS Compatible Product(s) (#)Available
Assembly bases中国 / 马来西亚
封装信息
Package Image
Toshiba Package NameTO-220SIS
JEITASC-67
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID11.1A
Power DissipationPD35W
Drain-Source voltageVDSS650V
Drain-Source voltageVDSS650V
产品特性
项目符号条件数值单位
Input capacitance (Typ.)Ciss-890pF
Total gate charge (Typ.)Qg-25nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.39Ω
技术资料
PSpicePSpice Model[Nov,2013](lib: 3KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TTD1415B