TK160F10N1 Power MOSFET (N-ch single 60V《VDSS≤150V)

数据手册DataSheet
产品概述
Application ScopeHigh efficiency DC/DC converters / Motor drivers / Switching regulators
PolarityN-ch
GenerationU-MOSⅧ-H
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NameTO-220SM(W)
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID160A
Power DissipationPD375W
Drain-Source voltageVDSS100V
Drain-Source voltageVDSS100V
产品特性
项目符号条件数值单位
Input capacitance (Typ.)Ciss-8510pF
Total gate charge (Typ.)Qg-121nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.0024Ω
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TK160F10N1,LQ(OJapan1000yes
技术资料
PSpicePSpice Model[Nov,2014](lib: 3KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TJ150F06M3L