TK18E10K3 Power MOSFET (N-ch single 60V《VDSS≤150V)

数据手册DataSheet
产品概述
Application ScopeSwitching regulators
PolarityN-ch
GenerationU-MOSⅣ
RoHS Compatible Product(s) (#)Available
Assembly bases中国
封装信息
Package Image
Toshiba Package NameTO-220
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID18A
Power DissipationPD71W
Drain-Source voltageVDSS100V
Drain-Source voltageVDSS100V
产品特性
项目符号条件数值单位
Total gate charge (Typ.)Qg-33nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.042Ω
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TK18E10K3,S1X(SChina50yes
技术资料
Reliability InformationReliability Data[Feb,2015](PDF: 87KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TK34E10N1