TK55S10N1 Power MOSFET (N-ch single 60V《VDSS≤150V)

数据手册DataSheet
产品概述
Application ScopeMotor drivers / Switching regulators
PolarityN-ch
GenerationU-MOSⅧ-H
AEC-Q101Conform
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Toshiba Package NameDPAK+
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID55A
Power DissipationPD157W
Drain-Source voltageVDSS100V
Drain-Source voltageVDSS100V
产品特性
项目符号条件数值单位
Input capacitance (Typ.)Ciss-3280pF
Total gate charge (Typ.)Qg-49nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.0065Ω
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TK55S10N1,LQ(OJapan2000yes
技术资料
PSpicePSpice Model[Aug,2014](lib: 3KB)
Reliability InformationReliability Data[Oct,2014](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)