TPC6107 Power MOSFET (P-ch single)

数据手册DataSheet
产品概述
PolarityP-ch
GenerationU-MOSⅣ
RoHS Compatible Product(s) (#)Available
封装信息
Package Image
Toshiba Package NameVS-6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-4.5A
Power DissipationPD2.2W
Drain-Source voltageVDSS-20V
Drain-Source voltageVDSS-20V
产品特性
项目符号条件数值单位
Total gate charge (Typ.)Qg-9.8nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.055Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.1Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2V0.18Ω
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPC6902