TPC6701：Power transistor for high-speed switching applications (2 in 1) _ BDTIC 中国领先电子元器件代理商

首页 > TOSHIBA 东芝 > 晶体管 > 双极晶体管 > TPC6701

TPC6701：Power transistor for high-speed switching applications (2 in 1)

数据手册DataSheet

日文版下载(PDF:406KB)
英文版下载(PDF:209KB)

产品概述

Polarity	NPN + NPN
RoHS Compatible Product(s) (#)	Available
Assembly bases	马来西亚

封装信息

Package Image
Toshiba Package Name	VS-6
Pins	6
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Collector Current (Q1)	I_C	1	A
Collector Current (Q2)	I_C	1	A
Collector Current (Q1)	I_CP	2	A
Collector Current (Q2)	I_CP	2	A
Collector power dissipation (Q1/Q2)	P_C	0.66	W
Collector-emitter voltage (Q1)	V_CEO	50	V
Collector-emitter voltage (Q2)	V_CEO	50	V

产品特性

项目	符号	条件	数值	单位
DC Current Gain hFE (Q1) (Max)	h_FE	I_C=0.1A V_CE=2V	1000	-
DC Current Gain hFE (Q1) (Min)	h_FE	I_C=0.1A V_CE=2V	400	-
DC Current Gain hFE (Q2) (Max)	h_FE	I_C=0.1A V_CE=2V	1000	-
DC Current Gain hFE (Q2) (Min)	h_FE	I_C=0.1A V_CE=2V	400	-
Collector Emitter Saturation Voltage (Q1) (Max)	V_CE(sat)	I_B=6mA I_C=0.3A	0.17	V
Collector Emitter Saturation Voltage (Q2) (Max)	V_CE(sat)	I_B=6mA I_C=0.3A	0.17	V

订购型号

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
TPC6701,LF(J	Malaysia	3000		yes

技术资料

Reliability Information	Reliability Data[Dec,2013]	(PDF: 161KB)
相关技术数据	Construction and Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 108KB)
相关技术数据	Maximum Ratings: Power MOSFET Application Notes[Oct,2004]	(PDF: 191KB)
相关技术数据	Electrical Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 182KB)
相关技术数据	Application Precautions: Power MOSFET Application Notes[Oct,2004]	(PDF: 303KB)
相关技术数据	Heat Sink Design: Power MOSFET Application Notes[Oct,2004]	(PDF: 237KB)
Catalog	Bipolar Power Transistors[Jun,2015]	(PDF: 1139KB)

TPC6902

©1993 - 2025 BDTIC