TPC6701:Power transistor for high-speed switching applications (2 in 1)

数据手册DataSheet
产品概述
PolarityNPN + NPN
RoHS Compatible Product(s) (#)Available
Assembly bases马来西亚
封装信息
Package Image
Toshiba Package NameVS-6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector Current (Q1)IC1A
Collector Current (Q2)IC1A
Collector Current (Q1)ICP2A
Collector Current (Q2)ICP2A
Collector power dissipation (Q1/Q2)PC0.66W
Collector-emitter voltage (Q1)VCEO50V
Collector-emitter voltage (Q2)VCEO50V
产品特性
项目符号条件数值单位
DC Current Gain hFE (Q1) (Max)hFEIC=0.1A
VCE=2V
1000-
DC Current Gain hFE (Q1) (Min)hFEIC=0.1A
VCE=2V
400-
DC Current Gain hFE (Q2) (Max)hFEIC=0.1A
VCE=2V
1000-
DC Current Gain hFE (Q2) (Min)hFEIC=0.1A
VCE=2V
400-
Collector Emitter Saturation Voltage (Q1) (Max)VCE(sat)IB=6mA
IC=0.3A
0.17V
Collector Emitter Saturation Voltage (Q2) (Max)VCE(sat)IB=6mA
IC=0.3A
0.17V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPC6701,LF(JMalaysia3000yes
技术资料
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)
TPC6902