TPC6901 Power transistor for high-speed switching applications

产品概述
Application ScopeMOS gate drivers
PolarityNPN + PNP
RoHS Compatible Product(s) (#)Available
封装信息
Package Image
Toshiba Package NameVS-6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC1.0A
Collector CurrentIC-0.7A
Collector CurrentIC-2.0A
Collector CurrentIC2.0A
Collector Current (Q1)IC1.0A
Collector Current (Q2)IC-0.7A
Collector CurrentICP-2.0A
Collector CurrentICP2.0A
Collector Current (Q1)ICP2.0A
Collector Current (Q2)ICP-2.0A
Collector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC0.5W
Collector power dissipation (Q1) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC0.5W
Collector power dissipation (Q1/Q2) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC0.5W
Collector-Base VoltageVCBO100V
Collector-Base VoltageVCBO-50V
Collector-Base Voltage (Q1)VCBO100V
Collector-Base Voltage (Q2)VCBO-50V
Collector-emitter voltage (Q1)VCEO50V
Collector-emitter voltage (Q2)VCEO-50V
Collector-emitter voltageVCEO-50V
Collector-emitter voltageVCEO50V
产品特性
项目符号条件数值单位
DC Current Gain hFE (Q1) (Max)hFE-1000-
DC Current Gain hFE (Q1) (Min)hFE-400-
DC Current Gain hFE (Q2) (Max)hFE-500-
DC Current Gain hFE (Q2) (Min)hFE-200-
Collector Emitter Saturation Voltage (Q1) (Max)VCE(sat)-0.17V
Collector Emitter Saturation Voltage (Q2) (Max)VCE(sat)--0.23V
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)
TPC6902