TPC8229-H Power MOSFET (N-ch dual)

数据手册DataSheet
产品概述
Application ScopeMotor drivers / Switching regulators
PolarityN-ch×2
GenerationU-MOSⅥ-H
RoHS Compatible Product(s) (#)Available
Assembly bases中国
封装信息
Package Image
Toshiba Package NameSOP-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID3.2A
Drain currentID3.2A
Drain current (Q1)ID3.2A
Drain current (Q2)ID3.2A
Power DissipationPD1.5W
Drain-Source voltageVDSS80V
Drain-Source voltageVDSS80V
Drain-Source voltageVDSS80V
Drain-Source voltageVDSS80V
Drain-Source voltage (Q1)VDSS80V
Drain-Source voltage (Q2)VDSS80V
产品特性
项目符号条件数值单位
Total gate charge (Q2) (Typ.)Qg-11nC
Total gate charge (Q1) (Typ.)Qg-11nC
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.087Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.080Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4.5V0.087Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=10V0.080Ω
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPC8229-H,LQ(SChina2500yes
技术资料
Reliability InformationReliability Data[Feb,2014](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPC8407