TPC8408 Power MOSFET (N-ch + P-ch complementary

数据手册DataSheet
产品概述
Application ScopeMobile equipments / Motor drivers
PolarityN-ch + P-ch
GenerationU-MOSⅥ-H/U-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly bases中国
封装信息
Package Image
Toshiba Package NameSOP-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID6.1A
Drain currentID-5.3A
Drain current (Q1)ID6.1A
Drain current (Q2)ID-5.3A
Power DissipationPD1.5W
Drain-Source voltageVDSS-40V
Drain-Source voltageVDSS40V
Drain-Source voltageVDSS-40V
Drain-Source voltageVDSS40V
Drain-Source voltage (Q1)VDSS40V
Drain-Source voltage (Q2)VDSS-40V
产品特性
项目符号条件数值单位
Input capacitance (Q1) (Typ.)Ciss-850pF
Input capacitance (Q2) (Typ.)Ciss-1105pF
Total gate charge (Q2) (Typ.)Qg-24nC
Total gate charge (Q1) (Typ.)Qg-14nC
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.036Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.032Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-10V0.043Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-4.5V0.053Ω
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPC8408,LQ(SChina2500yes
技术资料
Reliability InformationReliability Data[Feb,2014](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPC8407