TPCC8003-H Power MOSFET (N-ch single VDSS≤30V)

数据手册DataSheet
产品概述
Application ScopeMobile equipments / Notebook PCs
PolarityN-ch
GenerationU-MOSⅥ-H
RoHS Compatible Product(s) (#)Available
封装信息
Package Image
Toshiba Package NameTSON Advance
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID13A
Power DissipationPD22W
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS30V
产品特性
项目符号条件数值单位
Total gate charge (Typ.)Qg-17nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.0193Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.0169Ω
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCC8070