TPCF8003 Power MOSFET (N-ch single VDSS≤30V)

数据手册DataSheet
产品概述
Application ScopeMobile equipments / Notebook PCs
PolarityN-ch
GenerationU-MOSⅣ
RoHS Compatible Product(s) (#)Available
Assembly bases马来西亚
封装信息
Package Image
Toshiba Package NameVS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID7A
Power DissipationPD2.5W
Drain-Source voltageVDSS20V
Drain-Source voltageVDSS20V
产品特性
项目符号条件数值单位
Input capacitance (Typ.)Ciss-500pF
Total gate charge (Typ.)Qg-9.5nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.034Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.018Ω
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPCF8003,LF(CMMalaysia4000yes
技术资料
Reliability InformationReliability Data[Mar,2016](PDF: 58KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCF8003