TPCF8201 Power MOSFET (N-ch dual) _ BDTIC 中国领先电子元器件代理商

TPCF8201 Power MOSFET (N-ch dual)

数据手册DataSheet

日文版下载(PDF:341KB)Japanese
英文版下载(PDF:243KB)English

产品概述

Application Scope	Mobile equipments / Notebook PCs
Polarity	N-ch×2
Generation	U-MOSⅢ
RoHS Compatible Product(s) (#)	Available

封装信息

Package Image
Toshiba Package Name	VS-8
Pins	8
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain current	I_D	3	A
Drain current	I_D	3	A
Drain current (Q1)	I_D	3	A
Drain current (Q2)	I_D	3	A
Power Dissipation	P_D	1.35	W
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage (Q1)	V_DSS	20	V
Drain-Source voltage (Q2)	V_DSS	20	V

产品特性

项目	符号	条件	数值	单位
Total gate charge (Q2) (Typ.)	Q_g	-	7.5	nC
Total gate charge (Q1) (Typ.)	Q_g	-	7.5	nC
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=2V	0.1	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=2.5V	0.066	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=4.5V	0.049	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=2V	0.1	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=2.5V	0.066	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=4.5V	0.049	Ω

技术资料

相关技术数据	Construction and Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 108KB)
相关技术数据	Maximum Ratings: Power MOSFET Application Notes[Oct,2004]	(PDF: 191KB)
相关技术数据	Electrical Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 182KB)
相关技术数据	Application Precautions: Power MOSFET Application Notes[Oct,2004]	(PDF: 303KB)
相关技术数据	Heat Sink Design: Power MOSFET Application Notes[Oct,2004]	(PDF: 237KB)
Catalog	MOSFETs[Mar,2016]	(PDF: 2526KB)
Catalog	Part Number List: MOSFETs[Mar,2016]	(PDF: 1295KB)

TPCF8003

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