TPCF8302 Power MOSFET (P-ch dual)

数据手册DataSheet
产品概述
Application ScopeMobile equipments / Notebook PCs
PolarityP-ch×2
GenerationU-MOSⅣ
RoHS Compatible Product(s) (#)Available
Assembly bases马来西亚
封装信息
Package Image
Toshiba Package NameVS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-3A
Drain currentID-3A
Drain current (Q1)ID-3A
Drain current (Q2)ID-3A
Power DissipationPD1.35W
Drain-Source voltageVDSS-20V
Drain-Source voltageVDSS-20V
Drain-Source voltageVDSS-20V
Drain-Source voltageVDSS-20V
Drain-Source voltage (Q1)VDSS-20V
Drain-Source voltage (Q2)VDSS-20V
产品特性
项目符号条件数值单位
Total gate charge (Q2) (Typ.)Qg-11nC
Total gate charge (Q1) (Typ.)Qg-11nC
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=-4.5V0.059Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=-2.5V0.095Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=-1.8V0.2Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-4.5V0.059Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-2.5V0.095Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-1.8V0.2Ω
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCF8003