TPCF8402 Power MOSFET (N-ch + P-ch complementary

数据手册DataSheet
产品概述
Application ScopeMobile equipments / Motor drivers / High efficiency DC/DC converters
PolarityN-ch + P-ch
GenerationU-MOSⅣ/U-MOSⅢ
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NameVS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID4A
Drain currentID-3.2A
Drain current (Q1)ID4A
Drain current (Q2)ID-3.2A
Power DissipationPD1.35W
Drain-Source voltageVDSS-30V
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS-30V
Drain-Source voltageVDSS30V
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS-30V
产品特性
项目符号条件数值单位
Input capacitance (Q1) (Typ.)Ciss-470pF
Input capacitance (Q2) (Typ.)Ciss-600pF
Total gate charge (Q2) (Typ.)Qg-14nC
Total gate charge (Q1) (Typ.)Qg-10nC
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.077Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.05Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-10V0.072Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-4.5V0.105Ω
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCF8003