TPCP8302 Power MOSFET (P-ch dual) _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-5	A
Drain current	I_D	-5	A
Drain current (Q1)	I_D	-5	A
Drain current (Q2)	I_D	-5	A
Power Dissipation	P_D	1.48	W
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage (Q1)	V_DSS	-20	V
Drain-Source voltage (Q2)	V_DSS	-20	V

项目	符号	条件	数值	单位
Total gate charge (Q2) (Typ.)	Q_g	-	20	nC
Total gate charge (Q1) (Typ.)	Q_g	-	20	nC
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-4V	0.033	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-2.5V	0.045	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-1.8V	0.095	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-4V	0.033	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-2.5V	0.045	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-1.8V	0.095	Ω

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