TPCP8401 Power MOSFET (N-ch + P-ch complementary

产品概述
Application ScopePower management switches
PolarityN-ch + P-ch
GenerationU-MOSⅢ/π-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NamePS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.1A
Drain currentID-5.5A
Drain current (Q1)ID0.1A
Drain current (Q2)ID-5.5A
Power DissipationPD1.96W
Drain-Source voltageVDSS-12V
Drain-Source voltageVDSS20V
Drain-Source voltageVDSS-12V
Drain-Source voltageVDSS20V
Drain-Source voltage (Q1)VDSS20V
Drain-Source voltage (Q2)VDSS-12V
产品特性
项目符号条件数值单位
Total gate charge (Q2) (Typ.)Qg-20nC
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=2.5V4Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4V3Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-4.5V0.038Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-2.5V0.058Ω
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)