TPCP8403 Power MOSFET (N-ch + P-ch complementary

数据手册DataSheet
产品概述
Application ScopeMobile equipments / Motor drivers / High efficiency DC/DC converters
PolarityN-ch + P-ch
GenerationU-MOSⅢ/U-MOSⅣ
RoHS Compatible Product(s) (#)Available
封装信息
Package Image
Toshiba Package NamePS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID4.7A
Drain currentID-3.4A
Drain current (Q1)ID4.7A
Drain current (Q2)ID-3.4A
Power DissipationPD1.48W
Drain-Source voltageVDSS-40V
Drain-Source voltageVDSS40V
Drain-Source voltageVDSS-40V
Drain-Source voltageVDSS40V
Drain-Source voltage (Q1)VDSS40V
Drain-Source voltage (Q2)VDSS-40V
产品特性
项目符号条件数值单位
Total gate charge (Q2) (Typ.)Qg-15nC
Total gate charge (Q1) (Typ.)Qg-16nC
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.06Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.04Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-10V0.07Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-4.5V0.105Ω
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
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相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
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