TPCP8405 Power MOSFET (N-ch + P-ch complementary

数据手册DataSheet
产品概述
Application ScopeCellular phones / Motor drivers
PolarityN-ch + P-ch
GenerationU-MOSⅥ-H/U-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly bases日本 / 马来西亚
封装信息
Package Image
Toshiba Package NamePS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID6.5A
Drain currentID-6A
Drain current (Q1)ID6.5A
Drain current (Q2)ID-6A
Power DissipationPD1.48W
Drain-Source voltageVDSS-30V
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS-30V
Drain-Source voltageVDSS30V
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS-30V
产品特性
项目符号条件数值单位
Input capacitance (Q1) (Typ.)Ciss-830pF
Input capacitance (Q2) (Typ.)Ciss-1075pF
Total gate charge (Q2) (Typ.)Qg-24.1nC
Total gate charge (Q1) (Typ.)Qg-13.8nC
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.029Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.026Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-10V0.0313Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-4.5V0.042Ω
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPCP8405,LF(CMMalaysia3000yes
技术资料
Reliability InformationReliability Data[Apr,2014](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)