TPCP8F01 Power transistor for high-speed switching applications

产品概述
PolarityPNP + SMOS
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NamePS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC-3A
Collector CurrentIC-5A
Collector Current (Q1)IC-3A
Collector CurrentICP-5A
Collector Current (Q1)ICP-5A
Collector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC1W
Collector power dissipation (Q1) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC1W
Collector-emitter voltage (Q1)VCEO-20V
Collector-emitter voltageVCEO-20V
Drain-Source voltage (Q2)VDSS20V
产品特性
项目符号条件数值单位
DC Current Gain hFE (Q1) (Max)hFEIC=-0.5A
VCE=-2V
500-
DC Current Gain hFE (Q1) (Min)hFEIC=-0.5A
VCE=-2V
200-
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4V3Ω
Collector Emitter Saturation Voltage (Q1) (Max)VCE(sat)IB=-53mA
IC=-1.6A
-0.19V
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
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相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
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CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)