TPCP8G01 Power transistor for high-speed switching applications

数据手册DataSheet
产品概述
Application ScopeSwitching
PolarityPNP + P-ch
RoHS Compatible Product(s) (#)Available
封装信息
Package Image
Toshiba Package NamePS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC-5.0A
Collector CurrentIC-3.0A
Collector Current (Q1)IC-3.0A
Collector CurrentICP-5.0A
Collector Current (Q1)ICP-5.0A
Drain currentID-4.0A
Drain Current (pulse) (Q2)IDP-4.0A
Collector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC1.77W
Collector power dissipation (Q1) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC1.77W
Power Dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PD1.77W
Power Dissipation (Q2) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PD1.77W
Collector-Base VoltageVCBO-30V
Collector-Base Voltage (Q1)VCBO-30V
Collector-emitter voltage (Q1)VCEO-20V
Collector-emitter voltageVCEO-20V
Drain-Source voltage (Q2)VDSS-20V
产品特性
项目符号条件数值单位
Input capacitance (Q2) (Typ.)Ciss-335pF
DC Current Gain hFE (Q1) (Max)hFE-500-
DC Current Gain hFE (Q1) (Min)hFE-200-
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-4V0.130Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-2.5V0.186Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-1.8V0.32Ω
Collector Emitter Saturation Voltage (Q1) (Max)VCE(sat)--0.19V
技术资料
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