TPH1110ENH Power MOSFET (N-ch 150V《VDSS≤250V)

数据手册DataSheet
产品概述
Application ScopeHigh efficiency DC/DC converters / Switching regulators
PolarityN-ch
GenerationU-MOSⅧ-H
RoHS Compatible Product(s) (#)Available
Assembly bases马来西亚
封装信息
Toshiba Package NameSOP Advance
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID13A
Power DissipationPD42W
Drain-Source voltageVDSS200V
Drain-Source voltageVDSS200V
产品特性
项目符号条件数值单位
Input capacitance (Typ.)Ciss-460pF
Total gate charge (Typ.)Qg-7.0nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.114Ω
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPH1110ENH,L1Q(MMalaysia5000yes
技术资料
PSpicePSpice Model[Sep,2014](lib: 3KB)
Reliability InformationReliability Data[Mar,2016](PDF: 160KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)